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| Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data C1 A2 C2 GS8DI25104 IDC =4A V RRM = 250 V CJunction = 9 pF 8. 5. A = Anode, C = Cathode 1. 4. C1 A1 C2 Symbol IFAV IFAV IFSM TVJ Tstg Ptot Isolation Isolation Conditions TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine Maximum Ratings 04 3.5 10 -55...+175 -55...+150 A A A C C W V V Features Low forward voltage Very high switching speed Trr <15ns Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 TC = 25C (20W/device) (Substrate to Case) (Diode to Diode) TBD >2500 >600 Applications Symbol IR VF CJ RthJC Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 2 A; IF = 2 A; VR = 100 V; TVJ = 125C TVJ = 25C TVJ = 125C Characteristic Values typ. max. 1.3 1.3 1.3 1.2 9 125 1.5 mA mA V V pF C/W MHz switched mode power supplies (SMPS) High frequency converters Resonant converters Pulse test: c Pulse Width = 5 ms, Duty Cycle < 2.0 % Data per diode unless otherwise specified IXYSRF reserves the right to change limits, conditions and dimensions. (c) 2003 IXYSRF/Directed Energy, Inc. IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 GS8DI25104 g 10.00 100 CAPACITANCE IN pF Amperes 1.00 10 0.10 0.00 0.50 1.00 Volts 1.50 2.00 1 0.1 1 10 100 1000 R EVER BIASV SE OLTA INVO GE LTS Fig. 1 Typical forward characteristics Fig. 2 Typical junction capacity versus blocking voltage 160 140 TEMPERATURE IN C 120 100 80 60 40 20 300 REVERSE VOLTAGE IN VOLTS 250 200 150 100 50 0 1.00E-06 1.00E-05 LEAKAGE CURRENT IN AMPERES 1.00E-04 0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 LEAKAGE CURRENT IN AMPERES Fig. 3 Typical leakage current vs. voltage at 25C Fig. 4 Typical leakage current vs. temperature at 100V Reverse Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide Schottky diodes: Conduction Rectifier Diode By majority + minority carriers GaAs Schottky Diode By majority carriers only VF (IF), see Fig. 1 Reverse current charges junction capacity CJ, see Fig. 2; not temperature dependent No turn on overvoltage peak Forward characteristics VF (IF) Turn off characteristics Extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) Delayed saturation leads to VFR Turn on characteristics (c) 2003 IXYSRF/ IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 |
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